| PART |
Description |
Maker |
| VIO130-06P1 VII130-06P1 VDI130-06P1 VID130-06P1 IX |
IGBT Modules
From old datasheet system
IGBT Modules: Buck Configurated IGBT Modules
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
| MII300-12A4 MDI300-12A4 MID300-12A4 |
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules 330 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
IXYS, Corp.
|
| 20MT120UF 20MT120UFPBF |
40 A, 1200 V, N-CHANNEL IGBT MTP, 18 PIN
UltraFast NPT IGBT
1200V UltraFast 10-30 kHz Full-Bridge IGBT in a MTP package
|
Vishay Semiconductors
IRF[International Rectifier]
|
| SKM50GAL123D SKM50GB123D SKM50GB123D1 |
SEMITRANS? M IGBT Modules
SEMITRANS垄莽 M IGBT Modules
SEMITRANS㈢ M IGBT Modules
|
Semikron International
|
| VDI75-12P1 VIO75-12P1 VII75-12P1 VID75-12P1 |
IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA
IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA 92 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| CM400HA-34H |
HIGH POWER SWITCHING USE INSULATED TYPE
IGBT Modules:1700V
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM75TU-12H |
HIGH POWER SWITCHING USE INSULATED TYPE
IGBT Modules: 600V
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M57959 M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
From old datasheet system
HYBRID IC FOR DRIVING IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
ETC
Mitsubishi Electric Corporation
|
| CM150E3U-24H |
IGBT Modules:1200V
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| IRGS8B60K IRGSL8B60K IRGB8B60K |
INSULATED GATE BIPOLAR TRANSISTOR
600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package
|
http://
IRF[International Rectifier]
|
| IRG4PC30KD IRG4PC30KD-EPBF |
600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
28 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
|
IRF[International Rectifier]
Vishay Intertechnology, Inc.
|
